DMNH6042SSDQ-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 16.7A 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Grade: Automotive
Qualification: AEC-Q101
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Technische Details DMNH6042SSDQ-13 Diodes Incorporated
Description: MOSFET 2N-CH 60V 16.7A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V, Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMNH6042SSDQ-13 nach Preis ab 0.62 EUR bis 1.99 EUR
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DMNH6042SSDQ-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 41V-60V |
auf Bestellung 2755 Stücke: Lieferzeit 10-14 Tag (e) |
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DMNH6042SSDQ-13 | Diodes Incorporated |
Description: MOSFET 2N-CH 60V 16.7A 8SO Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc) Drain to Source Voltage (Vdss): 60V Power - Max: 2.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V |
auf Bestellung 8061 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMNH6042SSDQ-13 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 41V-60V
MOSFETs MOSFET BVDSS: 41V-60V
auf Bestellung 2755 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 1.59 EUR |
| 10+ | 1.3 EUR |
| 100+ | 1.01 EUR |
| 500+ | 0.85 EUR |
| 1000+ | 0.7 EUR |
| 2500+ | 0.62 EUR |
| DMNH6042SSDQ-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 16.7A 8SO
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
Description: MOSFET 2N-CH 60V 16.7A 8SO
Rds On (Max) @ Id, Vgs: 50mOhm @ 5.1A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 584pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 16.7A (Tc)
Drain to Source Voltage (Vdss): 60V
Power - Max: 2.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 3V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
auf Bestellung 8061 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 1.99 EUR |
| 14+ | 1.32 EUR |
| 100+ | 0.97 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.7 EUR |