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DMP1007UCB9-7

DMP1007UCB9-7 Diodes Incorporated


DMP1007UCB9.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 8V 13.2A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9 (Type C)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V
auf Bestellung 39000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.45 EUR
6000+0.42 EUR
9000+0.41 EUR
15000+0.40 EUR
Mindestbestellmenge: 3000
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Technische Details DMP1007UCB9-7 Diodes Incorporated

Description: MOSFET P-CH 8V 13.2A U-WLB1515-9, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V, Power Dissipation (Max): 840mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-WLB1515-9 (Type C), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V.

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DMP1007UCB9-7 DMP1007UCB9-7 Hersteller : Diodes Incorporated DMP1007UCB9.pdf Description: MOSFET P-CH 8V 13.2A U-WLB1515-9
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9 (Type C)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V
auf Bestellung 42686 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.69 EUR
16+1.15 EUR
100+0.77 EUR
500+0.60 EUR
1000+0.54 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DMP1007UCB9-7 Hersteller : Diodes Inc dmp1007ucb9.pdf Trans MOSFET P-CH 8V 13.2A 9-Pin UWLP T/R
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DMP1007UCB9-7 Hersteller : DIODES INCORPORATED DMP1007UCB9.pdf DMP1007UCB9-7 SMD P channel transistors
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DMP1007UCB9-7 DMP1007UCB9-7 Hersteller : Diodes Incorporated DIOD_S_A0009691114_1-2543270.pdf MOSFET MOSFET BVDSS: 8V-24V
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