DMP1007UCB9-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 8V 13.2A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V
Power Dissipation (Max): 840mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9 (Type C)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V
auf Bestellung 165000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.49 EUR |
| 6000+ | 0.46 EUR |
| 9000+ | 0.43 EUR |
| 30000+ | 0.42 EUR |
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Technische Details DMP1007UCB9-7 Diodes Incorporated
Description: MOSFET P-CH 8V 13.2A U-WLB1515-9, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta), Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V, Power Dissipation (Max): 840mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-WLB1515-9 (Type C), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V.
Weitere Produktangebote DMP1007UCB9-7 nach Preis ab 0.54 EUR bis 1.28 EUR
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DMP1007UCB9-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 8V 13.2A U-WLB1515-9 Packaging: Cut Tape (CT) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 13.2A (Ta) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 2A, 4.5V Power Dissipation (Max): 840mW (Ta) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: U-WLB1515-9 (Type C) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 8 V Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 4 V |
auf Bestellung 166716 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP1007UCB9-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W Case: U-WLB1515-9 Mounting: SMD Kind of package: reel; tape Drain current: -7.8A On-state resistance: 9.1mΩ Type of transistor: P-MOSFET Power dissipation: 1.53W Polarisation: unipolar Gate charge: 8.2nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -80A Drain-source voltage: -8V Anzahl je Verpackung: 3000 Stücke |
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DMP1007UCB9-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
Produkt ist nicht verfügbar |
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| DMP1007UCB9-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -7.8A; Idm: -80A; 1.53W Case: U-WLB1515-9 Mounting: SMD Kind of package: reel; tape Drain current: -7.8A On-state resistance: 9.1mΩ Type of transistor: P-MOSFET Power dissipation: 1.53W Polarisation: unipolar Gate charge: 8.2nC Kind of channel: enhanced Gate-source voltage: ±6V Pulsed drain current: -80A Drain-source voltage: -8V |
Produkt ist nicht verfügbar |