DMP1010UCA4-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET BVDSS: 8V~24V X2-DSN1212-
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V
Power Dissipation (Max): 630mW (Ta)
Vgs(th) (Max) @ Id: 1.05V @ 250µA
Supplier Device Package: X2-DSN1212-4
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 699 pF @ 4 V
auf Bestellung 882000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.27 EUR |
| 6000+ | 0.25 EUR |
| 9000+ | 0.23 EUR |
| 15000+ | 0.22 EUR |
| 21000+ | 0.21 EUR |
| 30000+ | 0.2 EUR |
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Technische Details DMP1010UCA4-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DSN1212-, Packaging: Tape & Reel (TR), Package / Case: 4-SMD, No Lead, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 6A (Ta), Rds On (Max) @ Id, Vgs: 9.9mOhm @ 1A, 4.5V, Power Dissipation (Max): 630mW (Ta), Vgs(th) (Max) @ Id: 1.05V @ 250µA, Supplier Device Package: X2-DSN1212-4, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 699 pF @ 4 V.
Weitere Produktangebote DMP1010UCA4-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| DMP1010UCA4-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V X2-DSN1212-4 T&R 3K |
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