DMP1012UCB9-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.44 EUR |
| 6000+ | 0.41 EUR |
| 9000+ | 0.39 EUR |
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Technische Details DMP1012UCB9-7 Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10A (Ta), Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V, Power Dissipation (Max): 890mW (Ta), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-WLB1515-9, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 8 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V.
Weitere Produktangebote DMP1012UCB9-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
 |
DMP1012UCB9-7 | Diodes Incorporated |
MOSFETs MOSFET |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP1012UCB9-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -8V Drain current: -6A Pulsed drain current: -50A Power dissipation: 1.57W Case: U-WLB1515-9 Gate-source voltage: ±6V On-state resistance: 14mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP1012UCB9-7 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET
MOSFETs MOSFET
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DMP1012UCB9-7 |
|
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -6A
Pulsed drain current: -50A
Power dissipation: 1.57W
Case: U-WLB1515-9
Gate-source voltage: ±6V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -8V; -6A; Idm: -50A; 1.57W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -8V
Drain current: -6A
Pulsed drain current: -50A
Power dissipation: 1.57W
Case: U-WLB1515-9
Gate-source voltage: ±6V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 10.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH