DMP1012UFDF-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 12V 12.6A/20A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V
Power Dissipation (Max): 720mW (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type F)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.25 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.22 EUR |
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Technische Details DMP1012UFDF-7 Diodes Incorporated
Description: MOSFET P-CH 12V 12.6A/20A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V, Power Dissipation (Max): 720mW (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V.
Weitere Produktangebote DMP1012UFDF-7 nach Preis ab 0.24 EUR bis 0.75 EUR
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DMP1012UFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 12V 12.6A/20A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.6A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 4.5V Power Dissipation (Max): 720mW (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 1344 pF @ 10 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1012UFDF-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
auf Bestellung 2454 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP1012UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Mounting: SMD Power dissipation: 1.36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -55A Case: U-DFN2020-6 Drain-source voltage: -12V Drain current: -12.6A On-state resistance: 40mΩ Type of transistor: P-MOSFET Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP1012UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -12.6A; Idm: -55A; 1.36W Mounting: SMD Power dissipation: 1.36W Polarisation: unipolar Kind of package: reel; tape Gate charge: 31nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -55A Case: U-DFN2020-6 Drain-source voltage: -12V Drain current: -12.6A On-state resistance: 40mΩ Type of transistor: P-MOSFET |
Produkt ist nicht verfügbar |