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DMP1022UFDEQ-7

DMP1022UFDEQ-7 Diodes Incorporated

DIOD_S_A0005736756_1-2542615.pdf Hersteller: Diodes Incorporated
MOSFETs 12V P-CH MOSFET
auf Bestellung 2711 Stücke:
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2+1.42 EUR
10+1.02 EUR
100+0.70 EUR
500+0.56 EUR
1000+0.52 EUR
3000+0.43 EUR
6000+0.40 EUR
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Technische Details DMP1022UFDEQ-7 Diodes Incorporated

Description: MOSFET P-CH 12V 9.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerUDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta), Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V, Power Dissipation (Max): 660mW (Ta), Vgs(th) (Max) @ Id: 800mV @ 250µA, Supplier Device Package: U-DFN2020-6 (Type E), Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V, Qualification: AEC-Q101.

Weitere Produktangebote DMP1022UFDEQ-7 nach Preis ab 0.53 EUR bis 1.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMP1022UFDEQ-7 DMP1022UFDEQ-7 Hersteller : Diodes Incorporated DMP1022UFDEQ.pdf Description: MOSFET P-CH 12V 9.1A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V
Qualification: AEC-Q101
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
17+1.05 EUR
100+0.69 EUR
500+0.53 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
DMP1022UFDEQ-7 Hersteller : Diodes Inc dmp1022ufdeq.pdf Trans MOSFET P-CH 12V 9.1A Automotive 6-Pin UDFN EP T/R
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DMP1022UFDEQ-7 Hersteller : DIODES INCORPORATED DMP1022UFDEQ.pdf DMP1022UFDEQ-7 SMD P channel transistors
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DMP1022UFDEQ-7 DMP1022UFDEQ-7 Hersteller : Diodes Incorporated DMP1022UFDEQ.pdf Description: MOSFET P-CH 12V 9.1A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerUDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
Power Dissipation (Max): 660mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: U-DFN2020-6 (Type E)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH