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DMP1046UFDB-13

DMP1046UFDB-13 Diodes Incorporated

DMP1046UFDB.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 50000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.18 EUR
20000+0.17 EUR
30000+0.16 EUR
Mindestbestellmenge: 10000
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Technische Details DMP1046UFDB-13 Diodes Incorporated

Description: MOSFET 2P-CH 12V 3.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V, Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B).

Weitere Produktangebote DMP1046UFDB-13 nach Preis ab 0.16 EUR bis 0.95 EUR

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DMP1046UFDB-13 DMP1046UFDB-13 Hersteller : Diodes Incorporated DMP1046UFDB.pdf MOSFETs 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC
auf Bestellung 75137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.74 EUR
10+0.5 EUR
100+0.24 EUR
500+0.23 EUR
1000+0.2 EUR
10000+0.16 EUR
Mindestbestellmenge: 4
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DMP1046UFDB-13 DMP1046UFDB-13 Hersteller : Diodes Incorporated DMP1046UFDB.pdf Description: MOSFET 2P-CH 12V 3.8A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
auf Bestellung 58409 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
2000+0.23 EUR
5000+0.2 EUR
Mindestbestellmenge: 19
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DMP1046UFDB-13 DMP1046UFDB-13 Hersteller : Diodes Inc dmp1046ufdb.pdf Trans MOSFET P-CH 12V 3.8A 6-Pin UDFN EP T/R
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DMP1046UFDB-13 Hersteller : DIODES INCORPORATED DMP1046UFDB.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -15A; 2.2W
Mounting: SMD
Case: U-DFN2020-6
Kind of package: 13 inch reel; tape
Polarisation: unipolar
Pulsed drain current: -15A
Drain-source voltage: -12V
Drain current: -4A
Gate charge: 17.9nC
On-state resistance: 0.115Ω
Power dissipation: 2.2W
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH