DMP1046UFDB-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET 2P-CH 12V 3.8A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.4W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V
Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
auf Bestellung 426000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.2 EUR |
| 9000+ | 0.18 EUR |
| 21000+ | 0.17 EUR |
| 75000+ | 0.16 EUR |
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Technische Details DMP1046UFDB-7 Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.8A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.4W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 3.8A, Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V, Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Weitere Produktangebote DMP1046UFDB-7 nach Preis ab 0.15 EUR bis 0.9 EUR
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DMP1046UFDB-7 | Hersteller : Diodes Incorporated |
MOSFETs 20V P-Ch Enh Mode 8Vgs 915pF 10.7nC |
auf Bestellung 9303 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1046UFDB-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 12V 3.8A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.4W Drain to Source Voltage (Vdss): 12V Current - Continuous Drain (Id) @ 25°C: 3.8A Input Capacitance (Ciss) (Max) @ Vds: 915pF @ 6V Rds On (Max) @ Id, Vgs: 61mOhm @ 3.6A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 17.9nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
auf Bestellung 428205 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1046UFDB-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 12V 3.8A 6-Pin UDFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMP1046UFDB-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -3.8A; Idm: -15A; 2.2W Type of transistor: P-MOSFET x2 Polarisation: unipolar Power dissipation: 2.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Gate charge: 17.9nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -15A Drain current: -3.8A On-state resistance: 61mΩ Drain-source voltage: -12V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP1046UFDB-7 | Hersteller : DIODES INCORPORATED |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -12V; -3.8A; Idm: -15A; 2.2W Type of transistor: P-MOSFET x2 Polarisation: unipolar Power dissipation: 2.2W Case: U-DFN2020-6 Mounting: SMD Kind of package: 7 inch reel; tape Gate charge: 17.9nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -15A Drain current: -3.8A On-state resistance: 61mΩ Drain-source voltage: -12V |
Produkt ist nicht verfügbar |