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DMP1055UFDB-7 Diodes Incorporated


DMP1055UFDB.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.9A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:

Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.29 EUR
6000+0.27 EUR
9000+0.26 EUR
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMP1055UFDB-7 Diodes Incorporated

Description: MOSFET 2P-CH 12V 3.9A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.36W, Drain to Source Voltage (Vdss): 12V, Current - Continuous Drain (Id) @ 25°C: 3.9A, Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V, Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Qualification: AEC-Q101.

Weitere Produktangebote DMP1055UFDB-7 nach Preis ab 0.31 EUR bis 1.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMP1055UFDB-7 DMP1055UFDB-7 Diodes Incorporated DMP1055UFDB.pdf Description: MOSFET 2P-CH 12V 3.9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
27+0.67 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.33 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP1055UFDB-7 DMP1055UFDB-7 Diodes Incorporated DMP1055UFDB.pdf MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 4160 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.48 EUR
10+0.87 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
3000+0.32 EUR
9000+0.31 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP1055UFDB-7 DMP1055UFDB.pdf
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 12V 3.9A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.36W
Drain to Source Voltage (Vdss): 12V
Current - Continuous Drain (Id) @ 25°C: 3.9A
Input Capacitance (Ciss) (Max) @ Vds: 1028pF @ 6V
Rds On (Max) @ Id, Vgs: 59mOhm @ 3.6A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 20.8nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+1 EUR
27+0.67 EUR
100+0.46 EUR
500+0.36 EUR
1000+0.33 EUR
Mindestbestellmenge: 18 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP1055UFDB-7 DMP1055UFDB.pdf
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 4160 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+1.48 EUR
10+0.87 EUR
100+0.6 EUR
500+0.46 EUR
1000+0.42 EUR
3000+0.32 EUR
9000+0.31 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH