auf Bestellung 2085 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 27+ | 1.93 EUR |
| 31+ | 1.71 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP1081UCB4-7 Diodes Incorporated
Description: MOSFET P-CH 12V 3A U-WLB1010-4, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V, Power Dissipation (Max): 820mW (Ta), Vgs(th) (Max) @ Id: 650mV @ 250µA, Supplier Device Package: U-WLB1010-4, Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V.
Weitere Produktangebote DMP1081UCB4-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
DMP1081UCB4-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 12V 3A U-WLB1010-4Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 650mV @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V |
Produkt ist nicht verfügbar |
|
|
|
DMP1081UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 12V 3A U-WLB1010-4 Packaging: Cut Tape (CT) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 3.3A (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 100mA, 0.9V Power Dissipation (Max): 820mW (Ta) Vgs(th) (Max) @ Id: 650mV @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 0.9V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 6 V |
Produkt ist nicht verfügbar |