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DMP10H400SEQ-13

DMP10H400SEQ-13 Diodes Incorporated


DMP10H400SEQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 100V 2.3A/6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 13.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V
auf Bestellung 410000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+0.44 EUR
5000+ 0.41 EUR
12500+ 0.38 EUR
Mindestbestellmenge: 2500
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Technische Details DMP10H400SEQ-13 Diodes Incorporated

Description: MOSFET P-CH 100V 2.3A/6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc), Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V, Power Dissipation (Max): 2W (Ta), 13.7W (Tc), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: SOT-223-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V.

Weitere Produktangebote DMP10H400SEQ-13 nach Preis ab 0.49 EUR bis 1.16 EUR

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DMP10H400SEQ-13 DMP10H400SEQ-13 Hersteller : Diodes Incorporated DMP10H400SEQ.pdf Description: MOSFET P-CH 100V 2.3A/6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.3A (Ta), 6A (Tc)
Rds On (Max) @ Id, Vgs: 250mOhm @ 5A, 10V
Power Dissipation (Max): 2W (Ta), 13.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 17.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1239 pF @ 25 V
auf Bestellung 411732 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
16+1.16 EUR
18+ 0.99 EUR
100+ 0.69 EUR
500+ 0.58 EUR
1000+ 0.49 EUR
Mindestbestellmenge: 16
DMP10H400SEQ-13 DMP10H400SEQ-13 Hersteller : Diodes Incorporated DMP10H400SEQ.pdf MOSFET 100V P-Ch Enh FET 250mOhm -10V -2.3A
auf Bestellung 3880 Stücke:
Lieferzeit 10-14 Tag (e)
DMP10H400SEQ-13 DMP10H400SEQ-13 Hersteller : DIODES INCORPORATED DMP10H400SEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain current: -2.1A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
DMP10H400SEQ-13 DMP10H400SEQ-13 Hersteller : DIODES INCORPORATED DMP10H400SEQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -2.1A; 2W; SOT223
Case: SOT223
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Drain current: -2.1A
On-state resistance: 0.3Ω
Type of transistor: P-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of channel: enhanced
Gate-source voltage: ±20V
Drain-source voltage: -100V
Produkt ist nicht verfügbar