DMP1200UFR4-7 Diodes Incorporated
auf Bestellung 2860 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.69 EUR |
10+ | 0.55 EUR |
100+ | 0.33 EUR |
1000+ | 0.21 EUR |
3000+ | 0.17 EUR |
9000+ | 0.16 EUR |
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Technische Details DMP1200UFR4-7 Diodes Incorporated
Description: MOSFET P-CH 12V 2A X2-DFN1010-3, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 2A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V, Power Dissipation (Max): 480mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1010-3, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V.
Weitere Produktangebote DMP1200UFR4-7 nach Preis ab 0.2 EUR bis 0.69 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP1200UFR4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 12V 2A X2-DFN1010-3 Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V |
auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1200UFR4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 12V 2A X2-DFN1010-3 Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2A, 4.5V Power Dissipation (Max): 480mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1010-3 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 12 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 514 pF @ 5 V |
auf Bestellung 57000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP1200UFR4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3 Case: X2-DFN1010-3 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A On-state resistance: 0.38Ω Type of transistor: P-MOSFET Power dissipation: 1.26W Kind of package: reel; tape Gate charge: 5.8nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD Anzahl je Verpackung: 5 Stücke |
Produkt ist nicht verfügbar |
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DMP1200UFR4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -12V; -2A; 1.26W; X2-DFN1010-3 Case: X2-DFN1010-3 Polarisation: unipolar Drain-source voltage: -12V Drain current: -2A On-state resistance: 0.38Ω Type of transistor: P-MOSFET Power dissipation: 1.26W Kind of package: reel; tape Gate charge: 5.8nC Kind of channel: enhanced Gate-source voltage: ±8V Mounting: SMD |
Produkt ist nicht verfügbar |