Produkte > DIODES INCORPORATED > DMP1555UFA-7B
DMP1555UFA-7B

DMP1555UFA-7B Diodes Incorporated


DMP1555UFA.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 200MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55.4 pF @ 10 V
auf Bestellung 210000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.09 EUR
20000+0.08 EUR
30000+0.08 EUR
50000+0.07 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMP1555UFA-7B Diodes Incorporated

Description: MOSFET P-CH 12V 200MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 200mA (Ta), Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 4.5V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN0806-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 12 V, Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 55.4 pF @ 10 V.

Weitere Produktangebote DMP1555UFA-7B nach Preis ab 0.08 EUR bis 0.38 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMP1555UFA-7B DMP1555UFA-7B Hersteller : Diodes Incorporated DMP1555UFA.pdf Description: MOSFET P-CH 12V 200MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN0806-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 0.84 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55.4 pF @ 10 V
auf Bestellung 213756 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
70+0.25 EUR
104+0.17 EUR
500+0.13 EUR
1000+0.12 EUR
2000+0.11 EUR
5000+0.09 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
DMP1555UFA-7B DMP1555UFA-7B Hersteller : Diodes Incorporated DMP1555UFA.pdf MOSFETs 12 P-Ch Enh FET 8 VGS 55.4pF 0.84nC
auf Bestellung 15047 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+0.38 EUR
12+0.25 EUR
100+0.13 EUR
1000+0.11 EUR
2500+0.09 EUR
20000+0.09 EUR
50000+0.08 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
DMP1555UFA-7B Hersteller : DIODES INCORPORATED DMP1555UFA.pdf DMP1555UFA-7B SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH