DMP2002UPS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 60A PWRDI5060-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: PowerDI5060-8 (Type K)
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 1.67 EUR |
| 5000+ | 1.61 EUR |
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Technische Details DMP2002UPS-13 Diodes Incorporated
Description: MOSFET P-CH 20V 60A PWRDI5060-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: PowerDI5060-8 (Type K), Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V.
Weitere Produktangebote DMP2002UPS-13 nach Preis ab 1.75 EUR bis 3.71 EUR
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DMP2002UPS-13 | Hersteller : Diodes Incorporated |
MOSFET 20V P-Ch Enh FET 12Vgss 104W |
auf Bestellung 1511 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2002UPS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 60A PWRDI5060-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 1.9mOhm @ 25A, 10V Power Dissipation (Max): 2.3W (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: PowerDI5060-8 (Type K) Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 585 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12826 pF @ 10 V |
auf Bestellung 39348 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2002UPS-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 60A 8-Pin PowerDI EP T/R |
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| DMP2002UPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 6.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -33.5A Pulsed drain current: -100A Power dissipation: 6.25W Case: PowerDI5060-8 Gate-source voltage: ±12V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 585nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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| DMP2002UPS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -33.5A; Idm: -100A; 6.25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -33.5A Pulsed drain current: -100A Power dissipation: 6.25W Case: PowerDI5060-8 Gate-source voltage: ±12V On-state resistance: 3.8mΩ Mounting: SMD Gate charge: 585nC Kind of package: reel; tape Kind of channel: enhanced |
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