| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.28 EUR |
| 10+ | 1.44 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.68 EUR |
| 3000+ | 0.65 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2005UFG-13 Diodes Incorporated
Description: MOSFET P-CH 20V 89A POWERDI3333, Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 900mV @ 250µA, Power Dissipation (Max): 2.2W (Ta), Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP2005UFG-13 nach Preis ab 0.71 EUR bis 2.45 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMP2005UFG-13 | Diodes Incorporated |
 Description: MOSFET P-CH 20V 89A POWERDI3333Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: PowerDI3333-8 Vgs(th) (Max) @ Id: 900mV @ 250µA Power Dissipation (Max): 2.2W (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V Current - Continuous Drain (Id) @ 25°C: 89A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 1733 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP2005UFG-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 89A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 89A POWERDI3333
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 2.2W (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 1733 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.45 EUR |
| 14+ | 1.55 EUR |
| 100+ | 1.02 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.71 EUR |