DMP2005UFG-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 89A POWERDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 89A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V
auf Bestellung 1575000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.53 EUR |
| 6000+ | 0.5 EUR |
| 9000+ | 0.46 EUR |
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Technische Details DMP2005UFG-13 Diodes Incorporated
Description: MOSFET P-CH 20V 89A POWERDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 89A (Tc), Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V, Power Dissipation (Max): 2.2W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V.
Weitere Produktangebote DMP2005UFG-13 nach Preis ab 0.52 EUR bis 1.41 EUR
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DMP2005UFG-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
auf Bestellung 3137 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2005UFG-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 89A POWERDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 89A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 15A, 4.5V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 125 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4670 pF @ 10 V |
auf Bestellung 1578490 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2005UFG-13 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 19A 8-Pin PowerDI EP T/R |
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| DMP2005UFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Kind of package: reel; tape Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -100A Mounting: SMD Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2005UFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -100A; 2.2W Case: PowerDI3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -15A On-state resistance: 14mΩ Type of transistor: P-MOSFET Power dissipation: 2.2W Kind of package: reel; tape Gate charge: 125nC Kind of channel: enhanced Gate-source voltage: ±10V Pulsed drain current: -100A Mounting: SMD |
Produkt ist nicht verfügbar |