Technische Details DMP2006UFG-13 Diodes Incorporated
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W, Polarisation: unipolar, Pulsed drain current: -80A, Drain current: -14A, Drain-source voltage: -20V, Gate-source voltage: ±10V, Gate charge: 200nC, On-state resistance: 17mΩ, Kind of package: 13 inch reel; tape, Power dissipation: 2.3W, Kind of channel: enhancement, Type of transistor: P-MOSFET, Case: PowerDI®3333-8, Mounting: SMD.
Weitere Produktangebote DMP2006UFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP2006UFG-13 | Hersteller : Diodes Incorporated |
 MOSFETs 20V P-Ch Enh Mode 10Vgss 5404pF 64nC |
Produkt ist nicht verfügbar |
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| DMP2006UFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -14A; Idm: -80A; 2.3W Polarisation: unipolar Pulsed drain current: -80A Drain current: -14A Drain-source voltage: -20V Gate-source voltage: ±10V Gate charge: 200nC On-state resistance: 17mΩ Kind of package: 13 inch reel; tape Power dissipation: 2.3W Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI®3333-8 Mounting: SMD |
Produkt ist nicht verfügbar |