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DMP2006UFGQ-13

DMP2006UFGQ-13 Diodes Incorporated

DMP2006UFGQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1755000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.6 EUR
6000+0.56 EUR
9000+0.55 EUR
Mindestbestellmenge: 3000
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Technische Details DMP2006UFGQ-13 Diodes Incorporated

Description: MOSFET P-CH 20V PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V, Power Dissipation (Max): 2.3W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3333-8, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V, Qualification: AEC-Q101.

Weitere Produktangebote DMP2006UFGQ-13 nach Preis ab 0.64 EUR bis 2.31 EUR

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DMP2006UFGQ-13 DMP2006UFGQ-13 Hersteller : Diodes Incorporated DIOD_S_A0005736751_1-2542873.pdf MOSFETs 20V P-CH Enhance Mode
auf Bestellung 2969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.78 EUR
10+1.22 EUR
100+0.86 EUR
500+0.69 EUR
1000+0.64 EUR
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DMP2006UFGQ-13 DMP2006UFGQ-13 Hersteller : Diodes Incorporated DMP2006UFGQ.pdf Description: MOSFET P-CH 20V PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 4.5V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: PowerDI3333-8
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7500 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 1757879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.31 EUR
13+1.45 EUR
100+0.97 EUR
500+0.76 EUR
1000+0.69 EUR
Mindestbestellmenge: 8
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DMP2006UFGQ-13 Hersteller : DIODES INCORPORATED DMP2006UFGQ.pdf DMP2006UFGQ-13 SMD P channel transistors
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