Produkte > DIODES INCORPORATED > DMP2007UFG-7
DMP2007UFG-7

DMP2007UFG-7 Diodes Incorporated

DMP2007UFG.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 18A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4621 pF @ 10 V
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.45 EUR
4000+0.43 EUR
6000+0.41 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMP2007UFG-7 Diodes Incorporated

Description: MOSFET P-CH 20V 18A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V, Power Dissipation (Max): 2.3W (Ta), Vgs(th) (Max) @ Id: 1.3V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4621 pF @ 10 V.

Weitere Produktangebote DMP2007UFG-7 nach Preis ab 0.43 EUR bis 1.41 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMP2007UFG-7 DMP2007UFG-7 Hersteller : Diodes Incorporated DMP2007UFG.pdf Description: MOSFET P-CH 20V 18A PWRDI3333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 15A, 10V
Power Dissipation (Max): 2.3W (Ta)
Vgs(th) (Max) @ Id: 1.3V @ 250µA
Supplier Device Package: PowerDI3333-8
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4621 pF @ 10 V
auf Bestellung 80317 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
16+1.11 EUR
100+0.77 EUR
500+0.6 EUR
1000+0.55 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
DMP2007UFG-7 DMP2007UFG-7 Hersteller : Diodes Incorporated DMP2007UFG.pdf MOSFETs 20V P-Ch Enh FET 12Vgss 29nC
auf Bestellung 5630 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.41 EUR
10+1.12 EUR
100+0.78 EUR
500+0.61 EUR
1000+0.56 EUR
2000+0.45 EUR
4000+0.43 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
DMP2007UFG-7 Hersteller : DIODES INCORPORATED DMP2007UFG.pdf DMP2007UFG-7 SMD P channel transistors
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH