auf Bestellung 60000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.23 EUR |
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Technische Details DMP2008UFG-7 Diodes Zetex
Description: MOSFET P-CH 20V 14A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V, Power Dissipation (Max): 2.4W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: PowerDI3333-8, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V.
Weitere Produktangebote DMP2008UFG-7 nach Preis ab 0.23 EUR bis 0.95 EUR
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DMP2008UFG-7 | Hersteller : Diodes Zetex |
 Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R |
auf Bestellung 60000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2008UFG-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2008UFG-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2008UFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 14A PWRDI3333 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2008UFG-7 | Hersteller : Diodes Incorporated |
MOSFET 20V P-CH MOSFET |
auf Bestellung 13903 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2008UFG-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 14A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 4.5V Power Dissipation (Max): 2.4W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: PowerDI3333-8 Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 6909 pF @ 10 V |
auf Bestellung 19008 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2008UFG-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2008UFG-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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DMP2008UFG-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 14A 8-Pin PowerDI EP T/R |
Produkt ist nicht verfügbar |
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| DMP2008UFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Case: PowerDI®3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -80A Mounting: SMD Anzahl je Verpackung: 2000 Stücke |
Produkt ist nicht verfügbar |
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| DMP2008UFG-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -80A; 2.4W Case: PowerDI®3333-8 Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A On-state resistance: 8mΩ Type of transistor: P-MOSFET Power dissipation: 2.4W Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -80A Mounting: SMD |
Produkt ist nicht verfügbar |