DMP2010UFG-13 DIODES INCORPORATED

Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W
Case: PowerDI3333-8
Drain-source voltage: -20V
Drain current: -12.7A
On-state resistance: 12.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 2.3W
Polarisation: unipolar
Kind of package: 13 inch reel; tape
Gate charge: 103nC
Kind of channel: enhancement
Gate-source voltage: ±10V
Pulsed drain current: -80A
Mounting: SMD
Anzahl je Verpackung: 3000 Stücke
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Technische Details DMP2010UFG-13 DIODES INCORPORATED
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W, Case: PowerDI3333-8, Drain-source voltage: -20V, Drain current: -12.7A, On-state resistance: 12.5mΩ, Type of transistor: P-MOSFET, Power dissipation: 2.3W, Polarisation: unipolar, Kind of package: 13 inch reel; tape, Gate charge: 103nC, Kind of channel: enhancement, Gate-source voltage: ±10V, Pulsed drain current: -80A, Mounting: SMD, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote DMP2010UFG-13
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP2010UFG-13 | Hersteller : Diodes Incorporated |
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DMP2010UFG-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |
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DMP2010UFG-13 | Hersteller : DIODES INCORPORATED |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W Case: PowerDI3333-8 Drain-source voltage: -20V Drain current: -12.7A On-state resistance: 12.5mΩ Type of transistor: P-MOSFET Power dissipation: 2.3W Polarisation: unipolar Kind of package: 13 inch reel; tape Gate charge: 103nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -80A Mounting: SMD |
Produkt ist nicht verfügbar |