Technische Details DMP2010UFG-13 Diodes Incorporated
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W, Polarisation: unipolar, Pulsed drain current: -80A, Drain current: -12.7A, Drain-source voltage: -20V, Gate-source voltage: ±10V, Gate charge: 103nC, On-state resistance: 12.5mΩ, Kind of package: 13 inch reel; tape, Power dissipation: 2.3W, Kind of channel: enhancement, Type of transistor: P-MOSFET, Case: PowerDI3333-8, Mounting: SMD.
Weitere Produktangebote DMP2010UFG-13
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP2010UFG-13 | Hersteller : Diodes Incorporated |
 MOSFETs 20V P-Ch Enh FET 10Vgss -80A Idm |
Produkt ist nicht verfügbar |
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| DMP2010UFG-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -12.7A; Idm: -80A; 2.3W Polarisation: unipolar Pulsed drain current: -80A Drain current: -12.7A Drain-source voltage: -20V Gate-source voltage: ±10V Gate charge: 103nC On-state resistance: 12.5mΩ Kind of package: 13 inch reel; tape Power dissipation: 2.3W Kind of channel: enhancement Type of transistor: P-MOSFET Case: PowerDI3333-8 Mounting: SMD |
Produkt ist nicht verfügbar |