DMP2010UFG-7 Diodes Incorporated

Description: MOSFET P-CH 20V 12.7A PWRDI3333, Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 103 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Active, Supplier Device Package: PowerDI3333-8, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 3.6A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 12.7A (Ta), 42A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR).