
auf Bestellung 1952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
3+ | 1.11 EUR |
10+ | 0.86 EUR |
100+ | 0.58 EUR |
500+ | 0.45 EUR |
1000+ | 0.4 EUR |
2000+ | 0.35 EUR |
4000+ | 0.32 EUR |
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Technische Details DMP2010UFV-7 Diodes Incorporated
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W, Case: PowerDI3333-8, Drain-source voltage: -20V, Drain current: -40A, On-state resistance: 12.5mΩ, Type of transistor: P-MOSFET, Power dissipation: 2W, Polarisation: unipolar, Kind of package: 7 inch reel; tape, Gate charge: 103nC, Kind of channel: enhancement, Gate-source voltage: ±10V, Pulsed drain current: -80A, Mounting: SMD, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote DMP2010UFV-7
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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DMP2010UFV-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Case: PowerDI3333-8 Drain-source voltage: -20V Drain current: -40A On-state resistance: 12.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 103nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -80A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2010UFV-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -40A; Idm: -80A; 2W Case: PowerDI3333-8 Drain-source voltage: -20V Drain current: -40A On-state resistance: 12.5mΩ Type of transistor: P-MOSFET Power dissipation: 2W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 103nC Kind of channel: enhancement Gate-source voltage: ±10V Pulsed drain current: -80A Mounting: SMD |
Produkt ist nicht verfügbar |