DMP2012SN-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 700MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 178.5 pF @ 10 V
auf Bestellung 93000 Stücke:
Lieferzeit 21-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.22 EUR |
| 75000+ | 0.2 EUR |
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Technische Details DMP2012SN-7 Diodes Incorporated
Description: MOSFET P-CH 20V 700MA SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V, Power Dissipation (Max): 500mW, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-59-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 178.5 pF @ 10 V.
Weitere Produktangebote DMP2012SN-7 nach Preis ab 0.23 EUR bis 0.94 EUR
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DMP2012SN-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 700MA SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 178.5 pF @ 10 V |
auf Bestellung 95008 Stücke: Lieferzeit 21-28 Tag (e) |
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DMP2012SN-7 | Hersteller : Diodes Incorporated |
MOSFET 20V 700mA |
auf Bestellung 5586 Stücke: Lieferzeit 14-28 Tag (e) |
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| DMP2012SN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.9A Pulsed drain current: -2.8A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2012SN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.9A Pulsed drain current: -2.8A Power dissipation: 0.5W Case: SC59 Gate-source voltage: ±12V On-state resistance: 0.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |