DMP2012SN-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 700MA SC59-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 900mA (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V
Power Dissipation (Max): 500mW
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SC-59-3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 178.5 pF @ 10 V
auf Bestellung 102000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.18 EUR |
| 6000+ | 0.16 EUR |
| 9000+ | 0.15 EUR |
| 15000+ | 0.14 EUR |
| 75000+ | 0.13 EUR |
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Technische Details DMP2012SN-7 Diodes Incorporated
Description: MOSFET P-CH 20V 700MA SC59-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 900mA (Ta), Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V, Power Dissipation (Max): 500mW, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SC-59-3, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Input Capacitance (Ciss) (Max) @ Vds: 178.5 pF @ 10 V.
Weitere Produktangebote DMP2012SN-7 nach Preis ab 0.16 EUR bis 0.65 EUR
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DMP2012SN-7 | Hersteller : Diodes Incorporated |
MOSFETs 20V 700mA |
auf Bestellung 4661 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2012SN-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 700MA SC59-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 900mA (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 400mA, 4.5V Power Dissipation (Max): 500mW Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SC-59-3 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Input Capacitance (Ciss) (Max) @ Vds: 178.5 pF @ 10 V |
auf Bestellung 103596 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2012SN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW Case: SC59 Drain-source voltage: -20V Drain current: -900mA On-state resistance: 0.5Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -2.8A Mounting: SMD Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2012SN-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -900mA; Idm: -2.8A; 500mW Case: SC59 Drain-source voltage: -20V Drain current: -900mA On-state resistance: 0.5Ω Type of transistor: P-MOSFET Power dissipation: 0.5W Polarisation: unipolar Kind of package: 7 inch reel; tape Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -2.8A Mounting: SMD |
Produkt ist nicht verfügbar |