DMP2033UVT-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 4.2A TSOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: TSOT-26
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.22 EUR |
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Technische Details DMP2033UVT-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.2A TSOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 15 V.
Weitere Produktangebote DMP2033UVT-7 nach Preis ab 0.21 EUR bis 0.88 EUR
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DMP2033UVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.2A TSOT-26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 15 V |
auf Bestellung 5895 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2033UVT-7 | Hersteller : Diodes Incorporated |
MOSFETs 20V P-Ch Enh Mode 8Vgss 845pF 10.4nC |
auf Bestellung 2963 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2033UVT-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 4.2A 6-Pin TSOT-26 T/R |
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DMP2033UVT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 Polarisation: unipolar Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -3.4A Gate charge: 10.4nC On-state resistance: 0.2Ω Power dissipation: 1.7W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape Anzahl je Verpackung: 1 Stücke |
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DMP2033UVT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -10A; 1.7W; TSOT26 Kind of channel: enhancement Type of transistor: P-MOSFET Mounting: SMD Case: TSOT26 Polarisation: unipolar Pulsed drain current: -10A Drain-source voltage: -20V Drain current: -3.4A Gate charge: 10.4nC On-state resistance: 0.2Ω Power dissipation: 1.7W Gate-source voltage: ±8V Kind of package: 7 inch reel; tape |
Produkt ist nicht verfügbar |