auf Bestellung 252000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.17 EUR |
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Technische Details DMP2035UFDF-7 Diodes Zetex
Description: MOSFET P-CH 20V 8.1A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta), Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V, Power Dissipation (Max): 2.03W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type F), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V.
Weitere Produktangebote DMP2035UFDF-7 nach Preis ab 0.18 EUR bis 0.83 EUR
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DMP2035UFDF-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 20V 8.1A 6UDFNPackaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V |
auf Bestellung 945000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2035UFDF-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 3K |
auf Bestellung 30454 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2035UFDF-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 8.1A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.1A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V Power Dissipation (Max): 2.03W (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type F) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1808 pF @ 15 V |
auf Bestellung 949407 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2035UFDF-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP2035UFDF-7 - Leistungs-MOSFET, p-Kanal, 20 V, 6.9 A, 0.02 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.9A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 660mW Anzahl der Pins: 6Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2035UFDF-7 | Hersteller : DIODES INC. |
Description: DIODES INC. - DMP2035UFDF-7 - Leistungs-MOSFET, p-Kanal, 20 V, 6.9 A, 0.02 ohm, UDFN2020, Oberflächenmontage tariffCode: 85412100 Drain-Source-Spannung Vds: 20V rohsCompliant: YES Dauer-Drainstrom Id: 6.9A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1V euEccn: NLR Verlustleistung: 660mW Anzahl der Pins: 6Pins productTraceability: Yes-Date/Lot Code Rds(on)-Prüfspannung: 4.5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.02ohm |
auf Bestellung 345 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2035UFDF-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 6.9A 6-Pin UDFN EP T/R |
Produkt ist nicht verfügbar |
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| DMP2035UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1.31W Polarisation: unipolar Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| DMP2035UFDF-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -6.5A; Idm: -40A; 1.31W Case: U-DFN2020-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Drain current: -6.5A On-state resistance: 0.12Ω Type of transistor: P-MOSFET Power dissipation: 1.31W Polarisation: unipolar Gate charge: 20.5nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -40A |
Produkt ist nicht verfügbar |