DMP2040USD-13 DIODES INCORPORATED
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5A; Idm: -30A; 1.6W; SO8
Mounting: SMD
Case: SO8
Pulsed drain current: -30A
Power dissipation: 1.6W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -5A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: 13 inch reel; tape
On-state resistance: 52mΩ
| Anzahl | Privatkunde |
|---|---|
| 88+ | 0.98 EUR |
| 106+ | 0.81 EUR |
| 121+ | 0.7 EUR |
| 204+ | 0.42 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.29 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2040USD-13 DIODES INCORPORATED
Description: MOSFET 2P-CH 20V 6.5A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.1W (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 12A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V, Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V, Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote DMP2040USD-13 nach Preis ab 0.29 EUR bis 1.27 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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DMP2040USD-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K |
auf Bestellung 4085 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2040USD-13 | Diodes Incorporated |
Description: MOSFET 2P-CH 20V 6.5A 8SO Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.1W (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 12A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 257 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP2040USD-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K
MOSFETs MOSFET BVDSS: 8V-24V SO-8 T&R 2.5K
auf Bestellung 4085 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.26 EUR |
| 10+ | 0.8 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.36 EUR |
| 2500+ | 0.32 EUR |
| 5000+ | 0.29 EUR |
| DMP2040USD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2P-CH 20V 6.5A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.1W (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 12A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 834pF @ 10V
Rds On (Max) @ Id, Vgs: 33mOhm @ 8.9A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 19nC @ 8V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 17+ | 1.27 EUR |
| 27+ | 0.8 EUR |
| 100+ | 0.51 EUR |