Technische Details DMP2042UCB4-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A U-WLB1010-4, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: U-WLB1010-4, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V.
Weitere Produktangebote DMP2042UCB4-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| DMP2042UCB4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.6A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V |
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