Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2042UCB4-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A U-WLB1010-4, Packaging: Tape & Reel (TR), Package / Case: 4-UFBGA, WLBGA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: U-WLB1010-4, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): -6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V.
Weitere Produktangebote DMP2042UCB4-7
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
| DMP2042UCB4-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 4.6A U-WLB1010-4 Packaging: Tape & Reel (TR) Package / Case: 4-UFBGA, WLBGA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: U-WLB1010-4 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): -6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| DMP2042UCB4-7 | DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.7A Pulsed drain current: -16A Power dissipation: 1.4W Case: U-WLB1010-4 Gate-source voltage: ±6V On-state resistance: 65mΩ Mounting: SMD Gate charge: 2.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH |
| DMP2042UCB4-7 |
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A U-WLB1010-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-WLB1010-4
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Description: MOSFET P-CH 20V 4.6A U-WLB1010-4
Packaging: Tape & Reel (TR)
Package / Case: 4-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 1A, 4.5V
Power Dissipation (Max): 1.4W
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: U-WLB1010-4
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DMP2042UCB4-7 |
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Pulsed drain current: -16A
Power dissipation: 1.4W
Case: U-WLB1010-4
Gate-source voltage: ±6V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 2.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -16A; 1.4W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.7A
Pulsed drain current: -16A
Power dissipation: 1.4W
Case: U-WLB1010-4
Gate-source voltage: ±6V
On-state resistance: 65mΩ
Mounting: SMD
Gate charge: 2.5nC
Kind of package: 7 inch reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH