DMP2042UCP4-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DSN1010-
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: X1-DSN1010-4 (Type C)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.23 EUR |
| 6000+ | 0.22 EUR |
| 9000+ | 0.2 EUR |
| 75000+ | 0.19 EUR |
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Technische Details DMP2042UCP4-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DSN1010-, Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): -6V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Supplier Device Package: X1-DSN1010-4 (Type C), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Power Dissipation (Max): 860mW (Ta), Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 4-XFBGA, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP2042UCP4-7 nach Preis ab 0.26 EUR bis 0.69 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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| DMP2042UCP4-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X1-DSN1010- Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): -6V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Supplier Device Package: X1-DSN1010-4 (Type C) Vgs(th) (Max) @ Id: 1.2V @ 250µA Power Dissipation (Max): 860mW (Ta) Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 4-XFBGA Packaging: Cut Tape (CT) |
auf Bestellung 230960 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP2042UCP4-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DSN1010-
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: X1-DSN1010-4 (Type C)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Cut Tape (CT)
Description: MOSFET BVDSS: 8V~24V X1-DSN1010-
Input Capacitance (Ciss) (Max) @ Vds: 218 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 2.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Supplier Device Package: X1-DSN1010-4 (Type C)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 860mW (Ta)
Rds On (Max) @ Id, Vgs: 48mOhm @ 1A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-XFBGA
Packaging: Cut Tape (CT)
auf Bestellung 230960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 31+ | 0.59 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.26 EUR |