DMP2045UFY4-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 4.7A X2-DFN2015
Packaging: Tape & Reel (TR)
Package / Case: 3-XDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta)
Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V
Power Dissipation (Max): 670mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN2015-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V
auf Bestellung 1206000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.13 EUR |
| 9000+ | 0.12 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2045UFY4-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.7A X2-DFN2015, Packaging: Tape & Reel (TR), Package / Case: 3-XDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta), Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V, Power Dissipation (Max): 670mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN2015-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V.
Weitere Produktangebote DMP2045UFY4-7 nach Preis ab 0.13 EUR bis 0.67 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMP2045UFY4-7 | Hersteller : Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V-24V X2-DFN2015-3 T&R 3K |
auf Bestellung 27927 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
|
|
DMP2045UFY4-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.7A X2-DFN2015 Packaging: Cut Tape (CT) Package / Case: 3-XDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.7A (Ta) Rds On (Max) @ Id, Vgs: 45mOhm @ 4A, 4.5V Power Dissipation (Max): 670mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN2015-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 6.8 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 634 pF @ 10 V |
auf Bestellung 1208212 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||
 |
DMP2045UFY4-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 4.7A 3-Pin X2-DFN T/R |
auf Bestellung 9000 Stücke: Lieferzeit 14-21 Tag (e) |
|||||||||||||
| DMP2045UFY4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Power dissipation: 1.49W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 6.8nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -25A Mounting: SMD Case: X2-DFN2015-3 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||
 |
DMP2045UFY4-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.7A 3-Pin X2-DFN T/R |
Produkt ist nicht verfügbar |
|||||||||||||
|
|
DMP2045UFY4-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.7A 3-Pin X2-DFN T/R |
Produkt ist nicht verfügbar |
|||||||||||||
| DMP2045UFY4-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.8A; Idm: -25A; 1.49W Drain-source voltage: -20V Drain current: -3.8A On-state resistance: 0.16Ω Type of transistor: P-MOSFET Power dissipation: 1.49W Polarisation: unipolar Kind of package: 7 inch reel; tape Gate charge: 6.8nC Kind of channel: enhancement Gate-source voltage: ±8V Pulsed drain current: -25A Mounting: SMD Case: X2-DFN2015-3 |
Produkt ist nicht verfügbar |