DMP2066LDMQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET P-CH 20V 4.6A SOT-26
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 5859000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.26 EUR |
| 6000+ | 0.24 EUR |
| 9000+ | 0.22 EUR |
| 15000+ | 0.21 EUR |
| 21000+ | 0.2 EUR |
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Technische Details DMP2066LDMQ-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-26, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP2066LDMQ-7 nach Preis ab 0.22 EUR bis 0.69 EUR
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DMP2066LDMQ-7 | Hersteller : Diodes Incorporated | MOSFETs MOSFET BVDSS |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2066LDMQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Case: SOT26 Kind of package: 7 inch reel; tape On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 10.1nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -18A Drain-source voltage: -20V Drain current: -3.7A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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DMP2066LDMQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Case: SOT26 Kind of package: 7 inch reel; tape On-state resistance: 70mΩ Type of transistor: P-MOSFET Power dissipation: 1.25W Polarisation: unipolar Gate charge: 10.1nC Kind of channel: enhancement Gate-source voltage: ±12V Pulsed drain current: -18A Drain-source voltage: -20V Drain current: -3.7A |
Produkt ist nicht verfügbar |