| Anzahl | Preis |
|---|---|
| 3+ | 1.04 EUR |
| 10+ | 0.65 EUR |
| 100+ | 0.42 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.28 EUR |
| 3000+ | 0.23 EUR |
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Technische Details DMP2066LDMQ-7 Diodes Incorporated
Description: MOSFET P-CH 20V 4.6A SOT-26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V, Power Dissipation (Max): 1.25W (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-26, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote DMP2066LDMQ-7 nach Preis ab 0.18 EUR bis 0.23 EUR
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| DMP2066LDMQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.6A SOT-26 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta) Rds On (Max) @ Id, Vgs: 40mOhm @ 4.6A, 4.5V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-26 Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 10.1 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 15 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 402000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2066LDMQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.7A; Idm: -18A; 1.25W; SOT26 Mounting: SMD Case: SOT26 Kind of package: 7 inch reel; tape Type of transistor: P-MOSFET Drain-source voltage: -20V Pulsed drain current: -18A Drain current: -3.7A Gate charge: 10.1nC On-state resistance: 70mΩ Power dissipation: 1.25W Gate-source voltage: ±12V Polarisation: unipolar Kind of channel: enhancement |
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