DMP2069UFY4-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.5A DFN2015H4-3
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN2015H4-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Tape & Reel (TR)
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Technische Details DMP2069UFY4-7 Diodes Incorporated
Description: MOSFET P-CH 20V 2.5A DFN2015H4-3, Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: DFN2015H4-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 530mW (Ta), Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP2069UFY4-7 nach Preis ab 0.22 EUR bis 0.79 EUR
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DMP2069UFY4-7 | Diodes Incorporated |
MOSFETs MOSFET P-CHAN. |
auf Bestellung 23980 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2069UFY4-7 | Diodes Incorporated |
Description: MOSFET P-CH 20V 2.5A DFN2015H4-3 Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Supplier Device Package: DFN2015H4-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 530mW (Ta) Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 3-XFDFN Packaging: Cut Tape (CT) |
auf Bestellung 206290 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2069UFY4-7 |
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Hersteller: Diodes Incorporated
MOSFETs MOSFET P-CHAN.
MOSFETs MOSFET P-CHAN.
auf Bestellung 23980 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 0.74 EUR |
| 10+ | 0.59 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.28 EUR |
| 3000+ | 0.22 EUR |
| DMP2069UFY4-7 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 2.5A DFN2015H4-3
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN2015H4-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 20V 2.5A DFN2015H4-3
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: DFN2015H4-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW (Ta)
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XFDFN
Packaging: Cut Tape (CT)
auf Bestellung 206290 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 23+ | 0.79 EUR |
| 28+ | 0.64 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.3 EUR |