DMP2069UFY4Q-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN2015-
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: X2-DFN2015-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-XDFN
Packaging: Tape & Reel (TR)
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Technische Details DMP2069UFY4Q-7 Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN2015-, Qualification: AEC-Q101, Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Grade: Automotive, Supplier Device Package: X2-DFN2015-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 530mW, Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP2069UFY4Q-7 nach Preis ab 0.31 EUR bis 1.16 EUR
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DMP2069UFY4Q-7 | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X2-DFN2015- Package / Case: 3-XDFN Packaging: Cut Tape (CT) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Grade: Automotive Supplier Device Package: X2-DFN2015-3 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 530mW Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 35975 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP2069UFY4Q-7 |
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Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X2-DFN2015-
Package / Case: 3-XDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: X2-DFN2015-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET BVDSS: 8V~24V X2-DFN2015-
Package / Case: 3-XDFN
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 214 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 9.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Grade: Automotive
Supplier Device Package: X2-DFN2015-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 530mW
Rds On (Max) @ Id, Vgs: 54mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 35975 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 16+ | 1.16 EUR |
| 25+ | 0.72 EUR |
| 100+ | 0.46 EUR |
| 500+ | 0.35 EUR |
| 1000+ | 0.31 EUR |