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DMP2100UCB9-7

DMP2100UCB9-7 Diodes Incorporated


DMP2100UCB9-219471.pdf Hersteller: Diodes Incorporated
MOSFET MOSFET BVDSS: 8V-24V U-WLB1515-9 T&R 3K
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Technische Details DMP2100UCB9-7 Diodes Incorporated

Description: MOSFET 2P-CH 20V 3A 9UWLB, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, WLBGA, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: U-WLB1515-9.

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DMP2100UCB9-7 DMP2100UCB9-7 Hersteller : Diodes Inc 886554756864198dmp2100ucb9.pdf Trans MOSFET P-CH 20V 3A 9-Pin U-WLB T/R
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DMP2100UCB9-7 DMP2100UCB9-7 Hersteller : Diodes Incorporated DMP2100UCB9.pdf Description: MOSFET 2P-CH 20V 3A 9UWLB
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-WLB1515-9
Produkt ist nicht verfügbar
DMP2100UCB9-7 DMP2100UCB9-7 Hersteller : Diodes Incorporated DMP2100UCB9.pdf Description: MOSFET 2P-CH 20V 3A 9UWLB
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: U-WLB1515-9
Produkt ist nicht verfügbar