DMP2100UCB9-7 Diodes Incorporated
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Technische Details DMP2100UCB9-7 Diodes Incorporated
Description: MOSFET 2P-CH 20V 3A 9UWLB, Packaging: Tape & Reel (TR), Package / Case: 9-UFBGA, WLBGA, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 800mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3A, Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V, Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: U-WLB1515-9.
Weitere Produktangebote DMP2100UCB9-7
| Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP2100UCB9-7 | Hersteller : Diodes Inc |
 Trans MOSFET P-CH 20V 3A 9-Pin U-WLB T/R |
Produkt ist nicht verfügbar |
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DMP2100UCB9-7 | Hersteller : Diodes Incorporated |
Description: MOSFET 2P-CH 20V 3A 9UWLB Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLBGA Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Source Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 100mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: U-WLB1515-9 |
Produkt ist nicht verfügbar |