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DMP2100UFU-13

DMP2100UFU-13 Diodes Incorporated


DMP2100UFU.pdf Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 20V U-DFN2030-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 5.7A
Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V
Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: U-DFN2030-6 (Type B)
Part Status: Active
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Technische Details DMP2100UFU-13 Diodes Incorporated

Description: MOSFET 2P-CH 20V U-DFN2030-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 900mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 5.7A, Input Capacitance (Ciss) (Max) @ Vds: 906pF @ 10V, Rds On (Max) @ Id, Vgs: 38mOhm @ 3.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 21.4nC @ 10V, Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: U-DFN2030-6 (Type B), Part Status: Active.

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DMP2100UFU-13 DMP2100UFU-13 Hersteller : Diodes Incorporated DMP2100UFU.pdf MOSFET Dual P-Ch Enh FET 20Vdss 10Vgss 0.9W
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