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DMP2109UCB6-7 Diodes Incorporated

DMP2109UCB6.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V U-WLB1510-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UFBGA, WLBGA
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Source
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
Power - Max: 840mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.25A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 269pF @ 10V
Rds On (Max) @ Id, Vgs: 108mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1510-6 (Type C)
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Technische Details DMP2109UCB6-7 Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V U-WLB1510-6, Packaging: Tape & Reel (TR), Package / Case: 6-UFBGA, WLBGA, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual) Common Source, Operating Temperature: -55°C ~ 150°C, Technology: MOSFET (Metal Oxide), Power - Max: 840mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 2.25A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 269pF @ 10V, Rds On (Max) @ Id, Vgs: 108mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 2.1nC @ 4.5V, Vgs(th) (Max) @ Id: 1.1V @ 250µA, Supplier Device Package: U-WLB1510-6 (Type C).