Technische Details DMP2110UFDBQ-13 Diodes Inc
Description: MOSFET BVDSS: 8V~24V U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 820mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V, Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.
Weitere Produktangebote DMP2110UFDBQ-13
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP2110UFDBQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V U-DFN2020-6 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 820mW (Ta) Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: U-DFN2020-6 (Type B) Part Status: Active |
Produkt ist nicht verfügbar |
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DMP2110UFDBQ-13 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K |
Produkt ist nicht verfügbar |