
DMP2110UFDBQ-13 Diodes Incorporated

Description: MOSFET 2P-CH 20V 3.2A 6UDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
auf Bestellung 220000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
10000+ | 0.19 EUR |
20000+ | 0.17 EUR |
30000+ | 0.16 EUR |
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Technische Details DMP2110UFDBQ-13 Diodes Incorporated
Description: MOSFET 2P-CH 20V 3.2A 6UDFN, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 820mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V, Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote DMP2110UFDBQ-13 nach Preis ab 0.15 EUR bis 0.15 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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DMP2110UFDBQ-13 | Hersteller : Diodes Zetex |
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auf Bestellung 380000 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP2110UFDBQ-13 | Hersteller : Diodes Inc |
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Produkt ist nicht verfügbar |
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DMP2110UFDBQ-13 | Hersteller : Diodes Incorporated |
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Produkt ist nicht verfügbar |