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DMP2110UFDBQ-13 Diodes Inc


dmp2110ufdbq.pdf Hersteller: Diodes Inc
P-Channel Enhancement Mode MOSFET
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Technische Details DMP2110UFDBQ-13 Diodes Inc

Description: MOSFET BVDSS: 8V~24V U-DFN2020-6, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 820mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V, Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: U-DFN2020-6 (Type B), Part Status: Active.

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DMP2110UFDBQ-13 DMP2110UFDBQ-13 Hersteller : Diodes Incorporated DMP2110UFDBQ.pdf Description: MOSFET BVDSS: 8V~24V U-DFN2020-6
Packaging: Tape & Reel (TR)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 820mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 443pF @ 10V
Rds On (Max) @ Id, Vgs: 75mOhm @ 2.8A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 12.7nC @ 8V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: U-DFN2020-6 (Type B)
Part Status: Active
Produkt ist nicht verfügbar
DMP2110UFDBQ-13 Hersteller : Diodes Incorporated DIOD_S_A0012955877_1-2513125.pdf MOSFET MOSFET BVDSS: 8V~24V U-DFN2020-6 T&R 10K
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