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DMP2120U-13

DMP2120U-13 Diodes Incorporated

DMP2120U.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 3.8A SOT23 T&R 1
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 487 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.09 EUR
Mindestbestellmenge: 10000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details DMP2120U-13 Diodes Incorporated

Description: MOSFET P-CH 20V 3.8A SOT23 T&R 1, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), Rds On (Max) @ Id, Vgs: 62mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 800mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 487 pF @ 20 V.

Weitere Produktangebote DMP2120U-13 nach Preis ab 0.09 EUR bis 0.62 EUR

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DMP2120U-13 DMP2120U-13 Hersteller : Diodes Incorporated DIOD_S_A0011183712_1-2543555.pdf MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 9093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.54 EUR
10+0.33 EUR
100+0.15 EUR
1000+0.12 EUR
2500+0.11 EUR
10000+0.09 EUR
20000+0.09 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
DMP2120U-13 DMP2120U-13 Hersteller : Diodes Incorporated DMP2120U.pdf Description: MOSFET P-CH 20V 3.8A SOT23 T&R 1
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4.2A, 4.5V
Power Dissipation (Max): 800mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-23-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 6.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 487 pF @ 20 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
29+0.62 EUR
41+0.43 EUR
100+0.22 EUR
500+0.18 EUR
1000+0.13 EUR
2000+0.11 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
DMP2120U-13 DMP2120U-13 Hersteller : Diodes Inc dmp2120u.pdf Trans MOSFET P-CH 20V 3.8A 3-Pin SOT-23 T/R
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DMP2120U-13 Hersteller : DIODES INCORPORATED DMP2120U.pdf DMP2120U-13 SMD P channel transistors
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