DMP213DUFA-7B DIODES INCORPORATED
Hersteller: DIODES INCORPORATEDCategory: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW
Kind of package: reel; tape
Gate charge: 0.35nC
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -0.5A
Mounting: SMD
Case: X2-DFN0806-3
Drain-source voltage: -25V
Drain current: -125mA
On-state resistance: 13Ω
Type of transistor: P-MOSFET
Power dissipation: 0.36W
Polarisation: unipolar
Anzahl je Verpackung: 10000 Stücke
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Technische Details DMP213DUFA-7B DIODES INCORPORATED
Category: SMD P channel transistors, Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW, Kind of package: reel; tape, Gate charge: 0.35nC, Kind of channel: enhanced, Gate-source voltage: ±8V, Pulsed drain current: -0.5A, Mounting: SMD, Case: X2-DFN0806-3, Drain-source voltage: -25V, Drain current: -125mA, On-state resistance: 13Ω, Type of transistor: P-MOSFET, Power dissipation: 0.36W, Polarisation: unipolar, Anzahl je Verpackung: 10000 Stücke.
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| DMP213DUFA-7B | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW Kind of package: reel; tape Gate charge: 0.35nC Kind of channel: enhanced Gate-source voltage: ±8V Pulsed drain current: -0.5A Mounting: SMD Case: X2-DFN0806-3 Drain-source voltage: -25V Drain current: -125mA On-state resistance: 13Ω Type of transistor: P-MOSFET Power dissipation: 0.36W Polarisation: unipolar |
Produkt ist nicht verfügbar |