DMP213DUFA-7B Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.13 EUR |
| 2500+ | 0.11 EUR |
| 5000+ | 0.1 EUR |
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Technische Details DMP213DUFA-7B Diodes Incorporated
Description: MOSFET P-CH 25V 145MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 145mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: X2-DFN0806-3, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): -8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V.
Weitere Produktangebote DMP213DUFA-7B
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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DMP213DUFA-7B | Diodes Incorporated |
 Description: MOSFET P-CH 25V 145MA 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 145mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: X2-DFN0806-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V |
auf Bestellung 290000 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| DMP213DUFA-7B |
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Hersteller: Diodes Incorporated
Description: MOSFET P-CH 25V 145MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 145mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V
Description: MOSFET P-CH 25V 145MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 145mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V
auf Bestellung 290000 Stücke:
Lieferzeit 10-14 Tag (e)