DMP213DUFA-7B Diodes Incorporated
auf Bestellung 9940 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.61 EUR |
| 10+ | 0.45 EUR |
| 100+ | 0.25 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.13 EUR |
| 2500+ | 0.11 EUR |
| 5000+ | 0.1 EUR |
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Technische Details DMP213DUFA-7B Diodes Incorporated
Description: MOSFET P-CH 25V 145MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 145mA (Ta), Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V, Power Dissipation (Max): 360mW (Ta), Vgs(th) (Max) @ Id: 1.5V @ 250µA, Supplier Device Package: X2-DFN0806-3, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): -8V, Drain to Source Voltage (Vdss): 25 V, Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V.
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DMP213DUFA-7B | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 25V 145MA 3DFNPackaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 145mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V Power Dissipation (Max): 360mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: X2-DFN0806-3 Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): -8V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V |
auf Bestellung 290000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP213DUFA-7B | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -25V; -125mA; Idm: -0.5A; 360mW Type of transistor: P-MOSFET Polarisation: unipolar Power dissipation: 0.36W Case: X2-DFN0806-3 Mounting: SMD Kind of package: 7 inch reel; tape Gate charge: 0.35nC Drain current: -125mA On-state resistance: 13Ω Gate-source voltage: ±8V Pulsed drain current: -0.5A Drain-source voltage: -25V Kind of channel: enhancement |
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