DMP21D6UFB4-7B Diodes Incorporated

Description: MOSFET P-CH 20V 580MA 3DFN, Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: X2-DFN1006-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 510mW (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 580mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-XFDFN, Packaging: Tape & Reel (TR).