auf Bestellung 17210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 0.57 EUR |
| 10+ | 0.44 EUR |
| 100+ | 0.24 EUR |
| 1000+ | 0.15 EUR |
| 10000+ | 0.13 EUR |
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Technische Details DMP21D6UFB4-7B Diodes Incorporated
Description: MOSFET P-CH 20V 580MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 580mA (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V, Power Dissipation (Max): 510mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V.
Weitere Produktangebote DMP21D6UFB4-7B nach Preis ab 0.27 EUR bis 0.58 EUR
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DMP21D6UFB4-7B | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 20V 580MA 3DFNPackaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V Power Dissipation (Max): 510mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V |
auf Bestellung 102 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP21D6UFB4-7B | Hersteller : Diodes Inc |
20V P-CHANNEL ENHANCEMENT MODE MOSFET |
Produkt ist nicht verfügbar |
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| DMP21D6UFB4-7B | Hersteller : DIODES INCORPORATED |
DMP21D6UFB4-7B SMD P channel transistors |
Produkt ist nicht verfügbar |
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DMP21D6UFB4-7B | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 580MA 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 580mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V Power Dissipation (Max): 510mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X2-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V |
Produkt ist nicht verfügbar |