Produkte > DIODES INCORPORATED > DMP21D6UFB4-7B
DMP21D6UFB4-7B

DMP21D6UFB4-7B Diodes Incorporated

DMP21D6UFB4.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 580MA 3DFN
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V
auf Bestellung 102 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
39+0.45 EUR
100+0.27 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMP21D6UFB4-7B Diodes Incorporated

Description: MOSFET P-CH 20V 580MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 580mA (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V, Power Dissipation (Max): 510mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X2-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V.

Weitere Produktangebote DMP21D6UFB4-7B nach Preis ab 0.13 EUR bis 0.59 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
DMP21D6UFB4-7B DMP21D6UFB4-7B Hersteller : Diodes Incorporated DMP21D6UFB4.pdf MOSFETs MOSFET BVDSS: 8V-24V
auf Bestellung 16490 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+0.59 EUR
10+0.46 EUR
100+0.3 EUR
500+0.22 EUR
1000+0.17 EUR
5000+0.15 EUR
10000+0.13 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
DMP21D6UFB4-7B Hersteller : Diodes Inc dmp21d6ufb4.pdf 20V P-CHANNEL ENHANCEMENT MODE MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DMP21D6UFB4-7B DMP21D6UFB4-7B Hersteller : Diodes Incorporated DMP21D6UFB4.pdf Description: MOSFET P-CH 20V 580MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 580mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V
Power Dissipation (Max): 510mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X2-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH