DMP21D6UFD-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 20V 600MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-UDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V
Power Dissipation (Max): 400mW
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1212-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V
Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V
auf Bestellung 1563000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.098 EUR |
| 6000+ | 0.094 EUR |
| 9000+ | 0.081 EUR |
| 30000+ | 0.08 EUR |
| 75000+ | 0.066 EUR |
| 150000+ | 0.065 EUR |
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Technische Details DMP21D6UFD-7 Diodes Incorporated
Description: MOSFET P-CH 20V 600MA 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-UDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 600mA (Ta), Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V, Power Dissipation (Max): 400mW, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1212-3, Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V, Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V.
Weitere Produktangebote DMP21D6UFD-7 nach Preis ab 0.059 EUR bis 0.82 EUR
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DMP21D6UFD-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 0.4W; X1-DFN1212-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.25A Power dissipation: 0.4W Case: X1-DFN1212-3 Gate-source voltage: ±8V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2880 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP21D6UFD-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -0.25A; 0.4W; X1-DFN1212-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -0.25A Power dissipation: 0.4W Case: X1-DFN1212-3 Gate-source voltage: ±8V On-state resistance: 3Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 2880 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP21D6UFD-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 600MA 3DFN Packaging: Cut Tape (CT) Package / Case: 3-UDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 600mA (Ta) Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V Power Dissipation (Max): 400mW Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1212-3 Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V |
auf Bestellung 1565887 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP21D6UFD-7 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 8V-24V |
auf Bestellung 10702 Stücke: Lieferzeit 14-28 Tag (e) |
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