auf Bestellung 72000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2305UVT-7 Diodes Zetex
Description: MOSFET P-CH 20V 4.2A SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: SOT-23-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V.
Weitere Produktangebote DMP2305UVT-7 nach Preis ab 0.22 EUR bis 1.14 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMP2305UVT-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 20V 4.2A SOT23-3Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V |
auf Bestellung 2960 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMP2305UVT-7 | Hersteller : Diodes Incorporated |
MOSFET 20V P-CH MOSFET |
auf Bestellung 2960 Stücke: Lieferzeit 14-28 Tag (e) |
|
||||||||||||||
|
|
DMP2305UVT-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.23A 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
DMP2305UVT-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 4.23A 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||
 |
DMP2305UVT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W Mounting: SMD Case: TSOT26 Kind of package: reel; tape Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -2.98A On-state resistance: 113mΩ Type of transistor: P-MOSFET Power dissipation: 1.64W Polarisation: unipolar Gate charge: 7.6nC Kind of channel: enhanced Gate-source voltage: ±8V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
DMP2305UVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.2A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: SOT-23-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V |
Produkt ist nicht verfügbar |
|||||||||||||||
|
|
DMP2305UVT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W Mounting: SMD Case: TSOT26 Kind of package: reel; tape Pulsed drain current: -16A Drain-source voltage: -20V Drain current: -2.98A On-state resistance: 113mΩ Type of transistor: P-MOSFET Power dissipation: 1.64W Polarisation: unipolar Gate charge: 7.6nC Kind of channel: enhanced Gate-source voltage: ±8V |
Produkt ist nicht verfügbar |