auf Bestellung 72000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.14 EUR |
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Technische Details DMP2305UVT-7 Diodes Zetex
Description: MOSFET P-CH 20V 4.2A TSOT26, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V, Power Dissipation (Max): 1.4W, Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: TSOT-26, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V.
Weitere Produktangebote DMP2305UVT-7 nach Preis ab 0.16 EUR bis 0.9 EUR
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DMP2305UVT-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET P-CH 20V 4.2A TSOT26Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2305UVT-7 | Hersteller : Diodes Incorporated |
MOSFETs 20V P-CH MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2305UVT-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 20V 4.2A TSOT26 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4.2A, 4.5V Power Dissipation (Max): 1.4W Vgs(th) (Max) @ Id: 900mV @ 250µA Supplier Device Package: TSOT-26 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 727 pF @ 20 V |
auf Bestellung 25650 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP2305UVT-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 20V 4.23A 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
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DMP2305UVT-7 | Hersteller : Diodes Inc |
Trans MOSFET P-CH 20V 4.23A 6-Pin TSOT-26 T/R |
Produkt ist nicht verfügbar |
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DMP2305UVT-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -2.98A; Idm: -16A; 1.64W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -2.98A Pulsed drain current: -16A Power dissipation: 1.64W Case: TSOT26 Gate-source voltage: ±8V On-state resistance: 113mΩ Mounting: SMD Gate charge: 7.6nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |