DMP2541UCP9-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DSN1515
Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 25 V
Vgs (Max): -6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X2-DSN1515-9 (Type B)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 9-XFBGA, DSBGA
Packaging: Bulk
| Anzahl | Preis |
|---|---|
| 3000+ | 0.39 EUR |
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Technische Details DMP2541UCP9-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V X2-DSN1515, Input Capacitance (Ciss) (Max) @ Vds: 566 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 4.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 25 V, Vgs (Max): -6V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: X2-DSN1515-9 (Type B), Vgs(th) (Max) @ Id: 1.1V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 40mOhm @ 2A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 3.8A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 9-XFBGA, DSBGA, Packaging: Bulk.