DMP2900UFB-7B Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±6V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: X1-DFN1006-3
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 550mW (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 990mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-UFDFN
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 10000+ | 0.063 EUR |
| 20000+ | 0.057 EUR |
| 30000+ | 0.054 EUR |
| 50000+ | 0.051 EUR |
| 70000+ | 0.049 EUR |
| 100000+ | 0.047 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP2900UFB-7B Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-, Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±6V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Supplier Device Package: X1-DFN1006-3, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 550mW (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Current - Continuous Drain (Id) @ 25°C: 990mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 3-UFDFN, Packaging: Tape & Reel (TR).
Weitere Produktangebote DMP2900UFB-7B nach Preis ab 0.072 EUR bis 0.47 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
|
DMP2900UFB-7B | Diodes Incorporated |
Description: MOSFET BVDSS: 8V~24V X1-DFN1006- Packaging: Cut Tape (CT) Package / Case: 3-UFDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 990mA (Ta) Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V Power Dissipation (Max): 550mW (Ta) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: X1-DFN1006-3 Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V |
auf Bestellung 108507 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
 |
DMP2900UFB-7B | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 8V~24V X1-DFN1006-3 T&R 10K |
auf Bestellung 6553 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP2900UFB-7B |
|
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
auf Bestellung 108507 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 46+ | 0.39 EUR |
| 76+ | 0.23 EUR |
| 122+ | 0.15 EUR |
| 500+ | 0.11 EUR |
| 1000+ | 0.094 EUR |
| 2000+ | 0.083 EUR |
| 5000+ | 0.072 EUR |
| DMP2900UFB-7B |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 8V~24V X1-DFN1006-3 T&R 10K
MOSFETs MOSFET BVDSS: 8V~24V X1-DFN1006-3 T&R 10K
auf Bestellung 6553 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 0.47 EUR |
| 10+ | 0.28 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.1 EUR |
| 5000+ | 0.09 EUR |
| 10000+ | 0.072 EUR |