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DMP2900UFB-7B

DMP2900UFB-7B Diodes Incorporated

DMP2900UFB.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Tape & Reel (TR)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.063 EUR
20000+0.057 EUR
30000+0.054 EUR
50000+0.051 EUR
70000+0.049 EUR
100000+0.047 EUR
Mindestbestellmenge: 10000
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Technische Details DMP2900UFB-7B Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V X1-DFN1006-, Packaging: Tape & Reel (TR), Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 990mA (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Power Dissipation (Max): 550mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V.

Weitere Produktangebote DMP2900UFB-7B nach Preis ab 0.06 EUR bis 0.51 EUR

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DMP2900UFB-7B DMP2900UFB-7B Hersteller : Diodes Incorporated DMP2900UFB.pdf Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Cut Tape (CT)
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
auf Bestellung 108507 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
76+0.23 EUR
122+0.15 EUR
500+0.11 EUR
1000+0.094 EUR
2000+0.083 EUR
5000+0.072 EUR
Mindestbestellmenge: 46
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DMP2900UFB-7B Hersteller : Diodes Incorporated DMP2900UFB-2940785.pdf MOSFET MOSFET BVDSS: 8V-24V X1-DFN1006-3 T&R 10K
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+0.51 EUR
10+0.34 EUR
100+0.22 EUR
1000+0.099 EUR
2500+0.084 EUR
10000+0.063 EUR
20000+0.06 EUR
Mindestbestellmenge: 6
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