DMP2900UFB-7B Diodes Incorporated

Description: MOSFET BVDSS: 8V~24V X1-DFN1006-
Packaging: Bulk
Package / Case: 3-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 990mA (Ta)
Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V
Power Dissipation (Max): 550mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: X1-DFN1006-3
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V
auf Bestellung 128818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
63+ | 0.28 EUR |
97+ | 0.18 EUR |
144+ | 0.12 EUR |
500+ | 0.09 EUR |
1000+ | 0.08 EUR |
2000+ | 0.08 EUR |
5000+ | 0.07 EUR |
10000+ | 0.06 EUR |
50000+ | 0.05 EUR |
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Technische Details DMP2900UFB-7B Diodes Incorporated
Description: MOSFET BVDSS: 8V~24V X1-DFN1006-, Packaging: Bulk, Package / Case: 3-UFDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 990mA (Ta), Rds On (Max) @ Id, Vgs: 750mOhm @ 430mA, 4.5V, Power Dissipation (Max): 550mW (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: X1-DFN1006-3, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±6V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 0.7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 49 pF @ 16 V.
Weitere Produktangebote DMP2900UFB-7B nach Preis ab 0.06 EUR bis 0.51 EUR
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DMP2900UFB-7B | Hersteller : Diodes Incorporated |
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auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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