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DMP3008SFGQ-7

DMP3008SFGQ-7 Diodes Incorporated


DMP3008SFGQ.pdf Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
auf Bestellung 54000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2000+0.76 EUR
Mindestbestellmenge: 2000
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Technische Details DMP3008SFGQ-7 Diodes Incorporated

Description: MOSFET P-CH 30V 8.6A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V.

Weitere Produktangebote DMP3008SFGQ-7 nach Preis ab 0.67 EUR bis 1.43 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMP3008SFGQ-7 DMP3008SFGQ-7 Hersteller : DIODES INCORPORATED DMP3008SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Application: automotive industry
Drain-source voltage: -30V
Drain current: -7.1A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PowerDI®3333-8
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3375 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
77+ 0.94 EUR
101+ 0.71 EUR
107+ 0.67 EUR
Mindestbestellmenge: 64
DMP3008SFGQ-7 DMP3008SFGQ-7 Hersteller : DIODES INCORPORATED DMP3008SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Application: automotive industry
Drain-source voltage: -30V
Drain current: -7.1A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Power dissipation: 0.9W
Polarisation: unipolar
Kind of package: reel; tape
Kind of channel: enhanced
Gate-source voltage: ±20V
Mounting: SMD
Case: PowerDI®3333-8
auf Bestellung 3375 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
64+1.13 EUR
77+ 0.94 EUR
101+ 0.71 EUR
107+ 0.67 EUR
Mindestbestellmenge: 64
DMP3008SFGQ-7 DMP3008SFGQ-7 Hersteller : Diodes Incorporated DMP3008SFGQ.pdf Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
auf Bestellung 56578 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
13+1.43 EUR
16+ 1.16 EUR
100+ 0.9 EUR
500+ 0.77 EUR
1000+ 0.76 EUR
Mindestbestellmenge: 13
DMP3008SFGQ-7 Hersteller : Diodes Incorporated DMP3008SFGQ-773622.pdf MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A
auf Bestellung 1271 Stücke:
Lieferzeit 10-14 Tag (e)