Produkte > DIODES INCORPORATED > DMP3008SFGQ-7
DMP3008SFGQ-7

DMP3008SFGQ-7 Diodes Incorporated

DMP3008SFGQ.pdf
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+0.79 EUR
4000+0.78 EUR
6000+0.77 EUR
Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details DMP3008SFGQ-7 Diodes Incorporated

Description: MOSFET P-CH 30V 8.6A PWRDI3333-8, Vgs(th) (Max) @ Id: 2.1V @ 250µA, Power Dissipation (Max): 900mW (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Qualification: AEC-Q101, Grade: Automotive, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8.

Weitere Produktangebote DMP3008SFGQ-7 nach Preis ab 0.64 EUR bis 2.45 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
DMP3008SFGQ-7 DMP3008SFGQ-7 DIODES INCORPORATED DMP3008SFGQ.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Power dissipation: 0.9W
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI®3333-8
Kind of channel: enhancement
auf Bestellung 3220 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.57 EUR
72+1 EUR
100+0.74 EUR
500+0.64 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3008SFGQ-7 DMP3008SFGQ-7 Diodes Incorporated DMP3008SFGQ.pdf MOSFETs 30V P-Ch Enh FET 20Vgss 0.9W -80A
auf Bestellung 1383 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.22 EUR
10+1.56 EUR
100+1.17 EUR
500+0.93 EUR
1000+0.85 EUR
2000+0.72 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3008SFGQ-7 DMP3008SFGQ-7 Diodes Incorporated DMP3008SFGQ.pdf Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 50514 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
11+1.72 EUR
100+1.27 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3008SFGQ-7 DMP3008SFGQ.pdf
DMP3008SFGQ-7
Hersteller: DIODES INCORPORATED
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8
Mounting: SMD
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7.1A
Gate-source voltage: ±20V
On-state resistance: 25mΩ
Power dissipation: 0.9W
Kind of package: 7 inch reel; tape
Application: automotive industry
Case: PowerDI®3333-8
Kind of channel: enhancement
auf Bestellung 3220 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
46+1.57 EUR
72+1 EUR
100+0.74 EUR
500+0.64 EUR
Mindestbestellmenge: 46 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3008SFGQ-7 DMP3008SFGQ.pdf
DMP3008SFGQ-7
Hersteller: Diodes Incorporated
MOSFETs 30V P-Ch Enh FET 20Vgss 0.9W -80A
auf Bestellung 1383 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2+2.22 EUR
10+1.56 EUR
100+1.17 EUR
500+0.93 EUR
1000+0.85 EUR
2000+0.72 EUR
Mindestbestellmenge: 2 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
DMP3008SFGQ-7 DMP3008SFGQ.pdf
DMP3008SFGQ-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 900mW (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 50514 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
8+2.45 EUR
11+1.72 EUR
100+1.27 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 8 Stücke
Im Einkaufswagen  Stück im Wert von  UAH