DMP3008SFGQ-7 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 8.6A PWRDI3333-8
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta)
Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V
Power Dissipation (Max): 900mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 0.76 EUR |
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Technische Details DMP3008SFGQ-7 Diodes Incorporated
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta), Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V, Power Dissipation (Max): 900mW (Ta), Vgs(th) (Max) @ Id: 2.1V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V.
Weitere Produktangebote DMP3008SFGQ-7 nach Preis ab 0.67 EUR bis 1.43 EUR
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DMP3008SFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8 Application: automotive industry Drain-source voltage: -30V Drain current: -7.1A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PowerDI®3333-8 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 3375 Stücke: Lieferzeit 7-14 Tag (e) |
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DMP3008SFGQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7.1A; 0.9W; PowerDI®3333-8 Application: automotive industry Drain-source voltage: -30V Drain current: -7.1A On-state resistance: 25mΩ Type of transistor: P-MOSFET Power dissipation: 0.9W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: PowerDI®3333-8 |
auf Bestellung 3375 Stücke: Lieferzeit 14-21 Tag (e) |
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DMP3008SFGQ-7 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 8.6A PWRDI3333-8 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 8.6A (Ta) Rds On (Max) @ Id, Vgs: 17mOhm @ 10A, 10V Power Dissipation (Max): 900mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: PowerDI3333-8 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2230 pF @ 15 V |
auf Bestellung 56578 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3008SFGQ-7 | Hersteller : Diodes Incorporated |
MOSFET 30V P-Ch Enh FET 20Vgss 0.9W -80A |
auf Bestellung 1271 Stücke: Lieferzeit 10-14 Tag (e) |