Type-UX;-;-8.jpg "DMP3011SFVWQ-13")
DMP3011SFVWQ-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 11.5A PWRDI3333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount, Wettable Flank
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Power Dissipation (Max): 980mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: PowerDI3333-8 (SWP) Type UX
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V
auf Bestellung 153000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.49 EUR |
| 6000+ | 0.47 EUR |
| 9000+ | 0.43 EUR |
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Technische Details DMP3011SFVWQ-13 Diodes Incorporated
Description: MOSFET P-CH 30V 11.5A PWRDI3333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Wettable Flank, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc), Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V, Power Dissipation (Max): 980mW (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: PowerDI3333-8 (SWP) Type UX, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V.
Weitere Produktangebote DMP3011SFVWQ-13 nach Preis ab 0.55 EUR bis 1.3 EUR
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DMP3011SFVWQ-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 11.5A PWRDI3333 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount, Wettable Flank Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 19.8A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V Power Dissipation (Max): 980mW (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI3333-8 (SWP) Type UX Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 15 V |
auf Bestellung 155830 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMP3011SFVWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W Mounting: SMD Pulsed drain current: -176A Power dissipation: 2.25W Gate charge: 46nC Polarisation: unipolar Drain current: -12A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Kind of package: reel; tape Case: PowerDI3333-8 On-state resistance: 18mΩ Gate-source voltage: ±25V Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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| DMP3011SFVWQ-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -12A; Idm: -176A; 2.25W Mounting: SMD Pulsed drain current: -176A Power dissipation: 2.25W Gate charge: 46nC Polarisation: unipolar Drain current: -12A Kind of channel: enhanced Drain-source voltage: -30V Type of transistor: P-MOSFET Kind of package: reel; tape Case: PowerDI3333-8 On-state resistance: 18mΩ Gate-source voltage: ±25V |
Produkt ist nicht verfügbar |