DMP3013SFV-13 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 12A PWRDI3333
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type UX)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.3 EUR |
| 6000+ | 0.28 EUR |
| 9000+ | 0.27 EUR |
| 15000+ | 0.26 EUR |
| 21000+ | 0.25 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP3013SFV-13 Diodes Incorporated
Description: MOSFET P-CH 30V 12A PWRDI3333, Vgs (Max): ±25V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: PowerDI3333-8 (Type UX), Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 940mW (Ta), Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V.
Weitere Produktangebote DMP3013SFV-13 nach Preis ab 0.29 EUR bis 1.28 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMP3013SFV-13 | Diodes Incorporated |
MOSFETs MOSFET BVDSS: 25V-30V |
auf Bestellung 1333 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||
|
|
DMP3013SFV-13 | Diodes Incorporated |
Description: MOSFET P-CH 30V 12A PWRDI3333 Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: PowerDI3333-8 (Type UX) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 940mW (Ta) Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 29461 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP3013SFV-13 |
|
Hersteller: Diodes Incorporated
MOSFETs MOSFET BVDSS: 25V-30V
MOSFETs MOSFET BVDSS: 25V-30V
auf Bestellung 1333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.17 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.37 EUR |
| 3000+ | 0.3 EUR |
| 6000+ | 0.29 EUR |
| DMP3013SFV-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 12A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type UX)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 30V 12A PWRDI3333
Input Capacitance (Ciss) (Max) @ Vds: 1674 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 33.7 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: PowerDI3333-8 (Type UX)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 940mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 35A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 29461 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.28 EUR |
| 22+ | 0.82 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |