DMP3018SSS-13 Diodes Incorporated
Hersteller: Diodes IncorporatedDescription: MOSFET P-CH 30V 10.5/25A 8SO T&R
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2500+ | 0.4 EUR |
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Technische Details DMP3018SSS-13 Diodes Incorporated
Description: MOSFET P-CH 30V 10.5/25A 8SO T&R, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 25A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V, Power Dissipation (Max): 1.2W (Ta), Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V.
Weitere Produktangebote DMP3018SSS-13 nach Preis ab 0.4 EUR bis 1.09 EUR
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DMP3018SSS-13 | Hersteller : Diodes Incorporated |
Description: MOSFET P-CH 30V 10.5/25A 8SO T&R Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 11.5A, 10V Power Dissipation (Max): 1.2W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2714 pF @ 15 V |
auf Bestellung 3978 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3018SSS-13 | Hersteller : Diodes Incorporated |
MOSFET MOSFET BVDSS: 25V~30V SO-8 T&R 2.5K |
auf Bestellung 2127 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3018SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8 Mounting: SMD Drain-source voltage: -30V Drain current: -8.5A On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -90A Case: SO8 Anzahl je Verpackung: 2500 Stücke |
Produkt ist nicht verfügbar |
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DMP3018SSS-13 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -8.5A; Idm: -90A; 1.7W; SO8 Mounting: SMD Drain-source voltage: -30V Drain current: -8.5A On-state resistance: 21mΩ Type of transistor: P-MOSFET Power dissipation: 1.7W Polarisation: unipolar Kind of package: reel; tape Gate charge: 51nC Kind of channel: enhanced Gate-source voltage: ±25V Pulsed drain current: -90A Case: SO8 |
Produkt ist nicht verfügbar |