Produkte > DIODES INCORPORATED > DMP3021SFVW-13
DMP3021SFVW-13

DMP3021SFVW-13 Diodes Incorporated


DMP3021SFVW.pdf Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
auf Bestellung 21000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.38 EUR
Mindestbestellmenge: 3000
Produktrezensionen
Produktbewertung abgeben

Technische Details DMP3021SFVW-13 Diodes Incorporated

Description: MOSFET BVDSS: 25V~30V POWERDI333, Packaging: Tape & Reel (TR), Package / Case: 8-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc), Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: PowerDI3333-8, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V.

Weitere Produktangebote DMP3021SFVW-13 nach Preis ab 0.42 EUR bis 1.09 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
DMP3021SFVW-13 DMP3021SFVW-13 Hersteller : Diodes Incorporated DMP3021SFVW.pdf Description: MOSFET BVDSS: 25V~30V POWERDI333
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 8A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: PowerDI3333-8
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1799 pF @ 15 V
auf Bestellung 22890 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
17+1.09 EUR
20+ 0.93 EUR
100+ 0.69 EUR
500+ 0.54 EUR
1000+ 0.42 EUR
Mindestbestellmenge: 17
DMP3021SFVW-13 Hersteller : Diodes Inc dmp3021sfvw.pdf 30V P-Channel Enhancement Mode MOSFET
Produkt ist nicht verfügbar
DMP3021SFVW-13 Hersteller : DIODES INCORPORATED DMP3021SFVW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -128A
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Anzahl je Verpackung: 3000 Stücke
Produkt ist nicht verfügbar
DMP3021SFVW-13 Hersteller : DIODES INCORPORATED DMP3021SFVW.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -9A; Idm: -128A; 2.5W
Mounting: SMD
Case: PowerDI3333-8
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 34nC
Kind of channel: enhanced
Gate-source voltage: ±25V
Pulsed drain current: -128A
Drain-source voltage: -30V
Drain current: -9A
On-state resistance: 25mΩ
Type of transistor: P-MOSFET
Produkt ist nicht verfügbar