DMP3036SSD-13 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 3+ | 1.21 EUR |
| 10+ | 1 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |
| 1000+ | 0.54 EUR |
| 2500+ | 0.41 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP3036SSD-13 Diodes Incorporated
Description: MOSFET 2P-CH 30V 18.0A 8SO, Packaging: Tape & Reel (TR), Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 P-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 1.2W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 18.0A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V, Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V, Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SO.
Weitere Produktangebote DMP3036SSD-13 nach Preis ab 0.59 EUR bis 1.83 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DMP3036SSD-13 | Diodes Incorporated |
 Description: MOSFET 2P-CH 30V 18.0A 8SOPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.2W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 18.0A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-SO |
auf Bestellung 847 Stücke: Lieferzeit 10-14 Tag (e) |
|
| DMP3036SSD-13 |
|
Hersteller: Diodes Incorporated
Description: MOSFET 2P-CH 30V 18.0A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.0A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
Description: MOSFET 2P-CH 30V 18.0A 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.2W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 18.0A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1931pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 9A, 10V
Gate Charge (Qg) (Max) @ Vgs: 16.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SO
auf Bestellung 847 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.83 EUR |
| 16+ | 1.15 EUR |
| 100+ | 0.76 EUR |
| 500+ | 0.59 EUR |