DMP3050LVTQ-7 Diodes Incorporated
Hersteller: Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R
Packaging: Bulk
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TSOT-26
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Qualification: AEC-Q101
auf Bestellung 23290 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
25+ | 0.72 EUR |
32+ | 0.56 EUR |
100+ | 0.34 EUR |
500+ | 0.31 EUR |
1000+ | 0.21 EUR |
3000+ | 0.19 EUR |
12000+ | 0.17 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DMP3050LVTQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP3050LVTQ-7 nach Preis ab 0.15 EUR bis 0.72 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
DMP3050LVTQ-7 | Hersteller : Diodes Zetex | MOSFET BVDSS: 25V30V TSOT26 T&R 3K |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||||||||
DMP3050LVTQ-7 | Hersteller : Diodes Incorporated | MOSFET MOSFET BVDSS: 25V~30V TSOT26 T&R 3K |
auf Bestellung 8774 Stücke: Lieferzeit 10-14 Tag (e) |
|
|||||||||||||||||
DMP3050LVTQ-7 | Hersteller : Diodes Inc | MOSFET BVDSS: 25V30V TSOT26 T&R 3K |
Produkt ist nicht verfügbar |
||||||||||||||||||
DMP3050LVTQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
||||||||||||||||||
DMP3050LVTQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: SMD Kind of package: tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |