DMP3050LVTQ-7 Diodes Incorporated
| Anzahl | Preis |
|---|---|
| 4+ | 0.86 EUR |
| 10+ | 0.53 EUR |
| 100+ | 0.34 EUR |
| 500+ | 0.26 EUR |
| 1000+ | 0.23 EUR |
| 3000+ | 0.21 EUR |
| 6000+ | 0.18 EUR |
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Technische Details DMP3050LVTQ-7 Diodes Incorporated
Description: MOSFET BVDSS: 25V~30V TSOT26 T&R, Packaging: Bulk, Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta), Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V, Power Dissipation (Max): 1.6W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TSOT-26, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V, Qualification: AEC-Q101.
Weitere Produktangebote DMP3050LVTQ-7 nach Preis ab 0.25 EUR bis 0.95 EUR
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DMP3050LVTQ-7 | Hersteller : Diodes Incorporated |
 Description: MOSFET BVDSS: 25V~30V TSOT26 T&RPackaging: Bulk Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta) Rds On (Max) @ Id, Vgs: 50mOhm @ 4.5A, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TSOT-26 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V Qualification: AEC-Q101 |
auf Bestellung 1697 Stücke: Lieferzeit 10-14 Tag (e) |
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DMP3050LVTQ-7 | Hersteller : Diodes Zetex |
Trans MOSFET P-CH 30V 4.5A 6-Pin TSOT-26 T/R Automotive AEC-Q101 |
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| DMP3050LVTQ-7 | Hersteller : DIODES INCORPORATED |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -4.5A; Idm: -25A; 1W; TSOT26 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -4.5A Pulsed drain current: -25A Power dissipation: 1W Case: TSOT26 Gate-source voltage: ±25V On-state resistance: 50mΩ Mounting: SMD Gate charge: 10.5nC Kind of package: 7 inch reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |